Complementary logic operation based on electric-field controlled spin–orbit torques

Abstract

Spintronic devices offer low power consumption, built-in memory, high scalability and reconfigurability, and could therefore provide an alternative to traditional semiconductor-based electronic devices. However, for spintronic devices to be useful in computing, complementary logic operation using spintronic logic gates is likely to be required. Here we report a complementary spin logic device using electric-field controlled spin–orbit torque switching in a heavy metal/ferromagnet/oxide structure. We show that the critical current for spin–orbit-torque-induced switching of perpendicular magnetization can be efficiently modulated by an electric field via the voltage-controlled magnetic anisotropy effect. Moreover, the polarity of the voltage-controlled magnetic anisotropy can be tuned through modification of the oxidation state at the ferromagnet/oxide interface. This allows us to create both n-type and p-type spin logic devices and demonstrate complementary logic operation. Complementary logic devices based on spin–orbit torque can be created in which the tunable polarity of the voltage-controlled magnetic anisotropy effect is used to fabricate n-type and p-type spin logic devices.

Cite this article

Baek, Sh.C., Park, KW., Kil, DS. et al. Complementary logic operation based on electric-field controlled spin–orbit torques. Nat Electron 1, 398–403 (2018). https://doi.org/10.1038/s41928-018-0099-8

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