A CMOS-integrated quantum sensor based on nitrogen–vacancy centres

Abstract

The nitrogen–vacancy (NV) centre in diamond can be used as a solid-state quantum sensor with applications in magnetometry, electrometry, thermometry and chemical sensing. However, to deliver practical applications, existing NV-based sensing techniques, which are based on bulky and discrete instruments for spin control and detection, must be replaced by more compact designs. Here we show that NV-based quantum sensing can be integrated with complementary metal–oxide–semiconductor (CMOS) technology to create a compact and scalable platform. Using standard CMOS technology, we integrate the essential components for NV control and measurement—microwave generator, optical filter and photodetector—in a 200 μm × 200 μm footprint. With this platform we demonstrate quantum magnetometry with a sensitivity of 32.1 μT Hz−1/2 and simultaneous thermometry. A compact platform for quantum magnetometry and thermometry can be created by integrating nitrogen–vacancy-based quantum sensing with complementary metal–oxide–semiconductor (CMOS) technology.

Cite this article

Kim, D., Ibrahim, M.I., Foy, C. et al. A CMOS-integrated quantum sensor based on nitrogen–vacancy centres. Nat Electron 2, 284–289 (2019). https://doi.org/10.1038/s41928-019-0275-5

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