Author: ["Mengwei Si","Atanu K. Saha","Shengjie Gao","Gang Qiu","Jingkai Qin","Yuqin Duan","Jie Jian","Chang Niu","Haiyan Wang","Wenzhuo Wu","Sumeet K. Gupta","Peide D. Ye"]
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Abstract
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room-temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers and its potential for large-area growth. A passivation method based on the atomic layer deposition of aluminium oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on current of 862 μA μm−1 and a low supply voltage. A ferroelectric semiconductor field-effect transistor, which uses the two-dimensional ferroelectric semiconductor α-In2Se3 as a channel material, could offer enhanced capabilities compared with conventional ferroelectric field-effect transistors in non-volatile memory applications.Cite this article
Si, M., Saha, A.K., Gao, S. et al. A ferroelectric semiconductor field-effect transistor. Nat Electron 2, 580–586 (2019). https://doi.org/10.1038/s41928-019-0338-7 