Deep moiré potentials in twisted transition metal dichalcogenide bilayers

Abstract

In twisted bilayers of semiconducting transition metal dichalcogenides, a combination of structural rippling and electronic coupling gives rise to periodic moiré potentials that can confine charged and neutral excitations1–5. Here we show that the moiré potential in these bilayers at small angles is unexpectedly large, reaching values above 300 meV for the valence band and 150 meV for the conduction band—an order of magnitude larger than theoretical estimates based on interlayer coupling alone. We further demonstrate that the moiré potential is a non-monotonic function of moiré wavelength, reaching a maximum at a moiré period of ~13 nm . This non-monotonicity coincides with a change in the structure of the moiré pattern from a continuous variation of stacking order at small moiré wavelengths to a one-dimensional soliton-dominated structure at large moiré wavelengths. We show that the in-plane structure of the moiré pattern is captured by a continuous mechanical relaxation model, and find that the moiré structure and internal strain, rather than the interlayer coupling, are the dominant factors in determining the moiré potential. Our results demonstrate the potential of using precision moiré structures to create deeply trapped carriers or excitations for quantum electronics and opto-electronics. The electrical potential created by a moiré pattern in twisted transition metal dichalcogenide bilayers can be surprisingly deep, trapping electrons that can possibly be used for opto-electronic or quantum simulation applications.

Cite this article

Shabani, S., Halbertal, D., Wu, W. et al. Deep moiré potentials in twisted transition metal dichalcogenide bilayers. Nat. Phys. (2021). https://doi.org/10.1038/s41567-021-01174-7

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