Author: ["Hailin Peng","Wenhui Dang","Jie Cao","Yulin Chen","Di Wu","Wenshan Zheng","Hui Li","Zhi-Xun Shen","Zhongfan Liu"]
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Abstract
Topological insulators are an intriguing class of materials with an insulating bulk state and gapless Dirac-type edge/surface states. Recent theoretical work predicts that few-layer topological insulators are promising candidates for broadband and high-performance optoelectronic devices due to their spin-momentum-locked massless Dirac edge/surface states, which are topologically protected against all time-reversal-invariant perturbations. Here, we present the first experimental demonstration of near-infrared transparent flexible electrodes based on few-layer topological-insulator Bi2Se3 nanostructures epitaxially grown on mica substrates by means of van der Waals epitaxy. The large, continuous, Bi2Se3-nanosheet transparent electrodes have single Dirac cone surface states, and exhibit sheet resistances as low as ~330 Ω per square, with a transparency of more than 70% over a wide range of wavelengths. Furthermore, Bi2Se3-nanosheet transparent electrodes show high chemical and thermal stabilities as well as excellent mechanical durability, which may lead to novel optoelectronic devices with unique properties. Transparent conductive electrodes are widely used in modern optoelectronic devices, but they are rarely transparent in the near-infrared, limiting their use. Nanostructured bismuth selenide, a topological insulator, is now shown to be a flexible near-infrared transparent electrode. Cite this article
Peng, H., Dang, W., Cao, J. et al. Topological insulator nanostructures for near-infrared transparent flexible electrodes. Nature Chem 4, 281–286 (2012). https://doi.org/10.1038/nchem.1277 