Author: ["Xiaorui Zheng","Annalisa Calò","Edoardo Albisetti","Xiangyu Liu","Abdullah Sanad M. Alharbi","Ghidewon Arefe","Xiaochi Liu","Martin Spieser","Won Jong Yoo","Takashi Taniguchi","Kenji Watanabe","Carmela Aruta","Alberto Ciarrocchi","Andras Kis","Brian S. Lee","Michal Lipson","James Hone","Davood Shahrjerdi","Elisa Riedo"]
CITE.CC academic search helps you expand the influence of your papers.
Abstract
Two-dimensional semiconductors, such as molybdenum disulfide (MoS2), exhibit a variety of properties that could be useful in the development of novel electronic devices. However, nanopatterning metal electrodes on such atomic layers, which is typically achieved using electron beam lithography, is currently problematic, leading to non-ohmic contacts and high Schottky barriers. Here, we show that thermal scanning probe lithography can be used to pattern metal electrodes with high reproducibility, sub-10-nm resolution, and high throughput (105 μm2 h−1 per single probe). The approach, which offers simultaneous in situ imaging and patterning, does not require a vacuum, high energy, or charged beams, in contrast to electron beam lithography. Using this technique, we pattern metal electrodes in direct contact with monolayer MoS2 for top-gate and back-gate field-effect transistors. These devices exhibit vanishing Schottky barrier heights (around 0 meV), on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64 mV per decade without using negative capacitors or hetero-stacks. Thermal scanning probe lithography can be used to pattern metal electrodes in direct contact with monolayer MoS2, creating field-effect transistors that exhibit vanishing Schottky barrier heights, high on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64 mV per decade.Cite this article
Zheng, X., Calò, A., Albisetti, E. et al. Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography. Nat Electron 2, 17–25 (2019). https://doi.org/10.1038/s41928-018-0191-0 