Author: ["Christoph Siegert","Arindam Ghosh","Michael Pepper","Ian Farrer","David A. Ritchie"]
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Abstract
Embedding magnetic moments into semiconductor heterostructures offers a tuneable access to various forms of magnetic ordering and phase transitions in low-dimensional electron systems. In general, the moments are introduced artificially, by either doping with ferromagnetic atoms, or electrostatically confining odd-electron quantum dots1,2,3,4. Here, we report experimental evidence of an independent, and intrinsic, source of localized spins in high-mobility GaAs/AlGaAs heterostructures with large setback distance (≈80 nm) in modulation doping. Measurements reveal a quasi-regular distribution of the spins in the delocalized Fermi sea, and a mutual interaction via the Ruderman–Kittel–Kasuya–Yosida (RKKY) indirect exchange below 100 mK. We show that a simple model on the basis of the fluctuations in background potential on the host two-dimensional electron system can explain the observed results quantitatively, which suggests a ‘disorder-templated’ microscopic origin of the localized moments.Cite this article
Siegert, C., Ghosh, A., Pepper, M. et al. The possibility of an intrinsic spin lattice in high-mobility semiconductor heterostructures. Nature Phys 3, 315–318 (2007). https://doi.org/10.1038/nphys559 