Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Abstract

The ability to build structures with atomic precision is one of the defining features of nanotechnology. Achieving true atomic-level functionality, however, requires the ability to control the wavefunctions of individual atoms. Here, we investigate an approach that could enable just that. By collecting and analysing transport spectra of a single donor atom in the channel of a silicon FinFET, we present experimental evidence for the emergence of a new type of hybrid molecule system. Our experiments and simulations suggest that the transistor’s gate potential can be used to control the degree of hybridization of a single electron donor state between the nuclear potential of its donor atom and a nearby quantum well. Moreover, our theoretical analysis enables us to determine the species of donor (arsenic) implanted into each device as well as the degree of confinement imposed by the gate. The ability to change the degree of hybridization of a donor electron state between the coulombic potential of its donor atom and that of a nearby quantum well in a silicon transistor has now been achieved. This is a promising step in the development of atomic-scale quantum control.

Cite this article

Lansbergen, G., Rahman, R., Wellard, C. et al. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET. Nature Phys 4, 656–661 (2008). https://doi.org/10.1038/nphys994

View full text

>> Full Text:   Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET