Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices

Abstract

Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can induce steady-state magnetization precession, and has recently been proposed as a working principle for ubiquitous radio-frequency devices for radar and telecommunication applications. However, so far, the development of industrially attractive prototypes has been hampered by the inability to identify systems that can provide enough power. Here, we demonstrate that microwave signals with device-compatible output power levels can be generated from a single magnetic tunnel junction with a lateral size of 100 nm, seven orders of magnitude smaller than conventional radio-frequency oscillators. We find that in MgO magnetic tunnel junctions the perpendicular torque induced by the spin-polarized current on the local magnetization can reach 25% of the in-plane spin-torque term, although showing a different bias dependence. Both findings contrast with the results obtained on all-metallic structures, previously investigated, reflecting the fundamentally different transport mechanisms in the two types of structure. Improvements in the microwave output efficiency of MgO-based magnetic tunnel junctions brings them a step closer to practical applications and enables greater insight into the physics of spin transfer in such devices.

Cite this article

Deac, A., Fukushima, A., Kubota, H. et al. Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices. Nature Phys 4, 803–809 (2008). https://doi.org/10.1038/nphys1036

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