High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects
Author: Cai, Hao; Kang, Wang; Wang, You; Naviner, Lirida A.D.B.; Yang, Jun; Zhao, Weisheng. 2017.
Publication: Applied Sciences 2017, Vol. 7, Page 929
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Abstract
The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms of zero standby power, switching power efficiency, infinite endurance and high density. However, it still has a big performance gap e.g., high dynamic write energy, large latency, yield and reliability. Recently, voltage-controlled magnetic anisotropy (VCMA) has been introduced to achieve improved energy-delay efficiency and robust non-volatile writing control with an electric field or a switching voltage. VCMA-MTJ-based MRAM could be a promising candidate in IoT node memory for high-performance, ultra-low power consumption targets.
Cite this article
Cai H, Kang W, Wang Y, Naviner LADB, Yang J, Zhao W. High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects. Applied Sciences. 2017; 7(9):929.https://doi.org/10.3390/app7090929
